SBE1 30 μm Silicon-Based Interdigitated Electrode Capacitive Array with High Precision and High Stability for MEMS Gas and Biosensing Applications

$29.00

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SKU: SBE1 Category:
Description
Potentiolab • Silicon-Based Interdigitated Electrode

30μm Silicon-Based Interdigitated Electrode Capacitive Array

High-precision 30μm silicon-based interdigitated electrode fabricated using MEMS technology for photoelectric detection, gas-sensitive, humidity-sensitive, biological, chemical, physical, and medical sensor applications.

30μm IDE PatternMEMS Fabrication

Cr/Au Electrode

30 micron silicon based interdigitated electrode capacitive array for MEMS gas humidity biosensors
silicon based MEMS interdigitated electrode for photoelectric gas humidity biological sensing
MEMS Silicon-Based Structure
  • Single-crystal silicon substrate
  • Surface-grown SiO₂ insulating layer
  • SiO₂ thickness: 300nm
  • Suitable for MEMS sensor fabrication
30μm Interdigitated Pattern
  • Line width: 30μm
  • Line spacing: 30μm
  • Finger length: 1.5mm
  • 20 pairs / 40 fingers
Cr/Au Metal Layer
  • Metal layer structure: Cr/Au
  • Cr thickness: 10nm
  • Au thickness: 100nm
  • Stable conductive performance
Wide Operating Temperature
  • Operating temperature: -150°C to 500°C
  • Excellent thermal stability
  • Reliable sensing performance
  • Suitable for harsh laboratory environments
Typical Applications
  • Photoelectric detection systems
  • Gas-sensitive MEMS sensors
  • Humidity-sensitive sensors
  • Biological and electrochemical sensing
  • Chemical, physical, and medical sensor research
ItemSpecification
Product Name30μm Silicon-Based Interdigitated Electrode Capacitive Array
SubstrateSingle-crystal silicon
Insulating LayerSurface-grown SiO₂, 300nm
Overall Size4mm × 7mm × 0.52mm
Line Width30μm
Line Spacing30μm
Finger Length1.5mm
Interdigitated Pairs20 pairs / 40 fingers
Metal Layer StructureCr/Au
Metal Layer ThicknessCr 10nm / Au 100nm
Operating Temperature-150°C to 500°C
Product Advantages
This silicon-based MEMS interdigitated electrode features a high-precision 30μm IDE structure, SiO₂-insulated single-crystal silicon substrate, and Cr/Au conductive layer system. It is suitable for photoelectric detection, gas-sensitive, humidity-sensitive, biological, electrochemical, chemical, physical, and medical sensing applications requiring reliable performance and stable quality.
Precautions
  • Handle carefully to avoid scratching the electrode surface.
  • Avoid mechanical impact or excessive force on the silicon substrate.
  • Clean gently with suitable laboratory-grade solvents before use.
  • Store in a clean, dry, and dust-free environment.
  • Custom electrode dimensions and patterns are available upon request.
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